Title :
S-Parameter Analysis of GaN Schottky Diodes for Microwave Power Rectification
Author :
Ao, Jin-Ping ; Takahashi, Kensuke ; Shinohara, Naoki ; Niwa, Naoki ; Fujiwara, Teruo ; Ohno, Yasuo
Author_Institution :
Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan
Abstract :
A gallium nitride (GaN) Schottky diode on semi-insulating SiC has been developed for microwave power rectification. A 2 μm × 100 μm finger type diode shows ON resistance of 8.2 Ω and depletion capacitance of 0.36 pF at 0 V with breakdown voltage of 90 V. S-parameter analysis separated the ON resistance into the intrinsic part and the access region part, which will benefit device optimization. With a 10-finger diode, RF/DC conversion efficiency of 74.4% is obtained at input power of 5 W and frequency of 2.45 GHz.
Keywords :
III-V semiconductors; Schottky diodes; gallium compounds; microwave power transmission; rectification; GaN; ON resistance; RF/DC conversion; S-parameter analysis; Schottky diodes; capacitance 0.36 pF; efficiency 74.4 percent; frequency 2.45 GHz; microwave power rectification; power 5 W; resistance 8.2 ohm; semi-insulating SiC; size 100 mum; size 2 mum; voltage 90 V; Capacitance; Electrical resistance measurement; Gallium nitride; Microwave amplifiers; Resistance; Schottky diodes;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619657
