S-Parameter Analysis of GaN Schottky Diodes for Microwave Power Rectification

Author

Ao, Jin-Ping ; Takahashi, Kensuke ; Shinohara, Naoki ; Niwa, Naoki ; Fujiwara, Teruo ; Ohno, Yasuo

Author_Institution

Inst. of Technol. & Sci., Univ. of Tokushima, Tokushima, Japan

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

A gallium nitride (GaN) Schottky diode on semi-insulating SiC has been developed for microwave power rectification. A 2 μm × 100 μm finger type diode shows ON resistance of 8.2 Ω and depletion capacitance of 0.36 pF at 0 V with breakdown voltage of 90 V. S-parameter analysis separated the ON resistance into the intrinsic part and the access region part, which will benefit device optimization. With a 10-finger diode, RF/DC conversion efficiency of 74.4% is obtained at input power of 5 W and frequency of 2.45 GHz.

Keywords

III-V semiconductors; Schottky diodes; gallium compounds; microwave power transmission; rectification; GaN; ON resistance; RF/DC conversion; S-parameter analysis; Schottky diodes; capacitance 0.36 pF; efficiency 74.4 percent; frequency 2.45 GHz; microwave power rectification; power 5 W; resistance 8.2 ohm; semi-insulating SiC; size 100 mum; size 2 mum; voltage 90 V; Capacitance; Electrical resistance measurement; Gallium nitride; Microwave amplifiers; Resistance; Schottky diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619657

Filename

5619657