Fabrication of InGaAs/GaAs DFB quantum wire lasers using V-grooved substrates

Author

Toda, Tomoaki ; Reinhardt, Frank ; Martinet, Eric ; Kapon, Eli ; Nakano, Yoshiaki

Author_Institution

Dept. of Phys., Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1998

fDate

11-15 May 1998

Firstpage

349

Lastpage

352

Abstract

Distributed feedback (DFB) quantum wire (QWR) lasers were fabricated on V-grooved substrates. After characterizing the wire emission using electro- and photoluminescence techniques, DFB laser cavities incorporating such QWRs with an emission wavelength matched to the Bragg wavelength were designed and fabricated. The selectivity of lasing wavelength of the DFB cavity was used to obtaining DFB operation at the emission wavelength of the wire up to 145 K under pulsed conditions. The emission from the parasitic quantum well structures was suppressed due to the forbidden DFB gap

Keywords

III-V semiconductors; electroluminescence; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wires; Bragg wavelength; InGaAs/GaAs DFB quantum wire lasers; InP; V-grooved substrates; electroluminescence; emission wavelength; forbidden DFB gap; parasitic quantum well structures; photoluminescence; wire emission; Distributed feedback devices; Gallium arsenide; Indium gallium arsenide; Laser feedback; Laser modes; Laser theory; Optical device fabrication; Photonic integrated circuits; Quantum well lasers; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712474

Filename

712474