• DocumentCode
    2820055
  • Title

    Developing GaN HEMTs for Ka-Band with 20W

  • Author

    Takagi, Kazutaka ; Matsushita, Keiichi ; Kashiwabara, Yasushi ; Masuda, Kazutoshi ; Nakanishi, Shinichiro ; Sakurai, Hiroyuki ; Onodera, Ken ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio

  • Author_Institution
    Microwave Solid-state Eng. Dept., Toshiba Corp., Kawasaki, Japan
  • fYear
    2010
  • fDate
    3-6 Oct. 2010
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    AlGaN/GaN High Electron Mobility Transistors(HEMTs) were developed for Ka-band. The developed device showed 138 GHz of fmax, which depended on the thickness of the AlGaN barrier layer and the gate length. It had a 6.4 mm gate periphery on a metal carrier plate. The output power achieved 20 W with impedance matching circuits.
  • Keywords
    III-V semiconductors; high electron mobility transistors; impedance matching; millimetre wave transistors; AlGaN; GaN; HEMT; Ka-band; frequency 138 GHz; high electron mobility transistors; impedance matching circuits; power 20 W; size 6.4 mm; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MMICs; MODFETs; Power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • ISSN
    1550-8781
  • Print_ISBN
    978-1-4244-7437-0
  • Electronic_ISBN
    1550-8781
  • Type

    conf

  • DOI
    10.1109/CSICS.2010.5619660
  • Filename
    5619660
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2820055