Title :
On the characterisation of high speed photodetectors by use of modelocked lasers as the optical source
Author :
Parker, D.G. ; Finch, A. ; Sibbett, W. ; Wake, D.
Author_Institution :
BT&D Technol. Ltd., Ipswich, UK
Abstract :
The authors discuss the use of mode-locked solid state and dye lasers as the optical sources. Such lasers are capable of generating a continuous measurement bandwidth of thousands of gigahertz at a variety of wavelengths. Two measurements are discussed: direct microwave based detection and opto-electronic sampling. The devices tested and used as examples include an indium tin oxide (ITO)-GaAs Schottky photodiode and GaInAs PIN photodiode with bandwidths of 110 GHz and 25 GHz respectively
Keywords :
III-V semiconductors; dye lasers; gallium arsenide; high-speed optical techniques; indium compounds; laser beam applications; laser mode locking; neodymium; organic compounds; photodetectors; photodiodes; semiconductor device testing; solid lasers; tin compounds; 110 GHz; 25 GHz; GaInAs; ITO-GaAs; InSnO-GaAs; PIN photodiode; Schottky photodiode; YAG:Nd laser; YAl5O12:Nd; continuous measurement bandwidth; direct microwave based detection; high speed photodetectors; mode-locked Nd:YAG lasers; mode-locked rhodamine 6G lasers; modelocked lasers; optical source; opto-electronic sampling; semiconductor;
Conference_Titel :
Applications of Ultrashort Pulses for Optoelectronics, IEE Colloquium on
Conference_Location :
London
