Advanced Heterogeneous Integration of InP HBT and CMOS Si Technologies

Author

Gutierrez-Aitken, Augusto ; Chang-Chien, Patty ; Scott, Dennis ; Hennig, Kelly ; Kaneshiro, Eric ; Nam, Peter ; Cohen, Neir ; Ching, Daniel ; Thai, Khanh ; Oyama, Bert ; Zhou, Joe ; Geiger, Craig ; Poust, Ben ; Parlee, Matthew ; Sandhu, Randy ; Phan, Wen

Author_Institution

Northrop Grumman Aerosp. Syst., Redondo Beach, CA, USA

fYear

2010

fDate

3-6 Oct. 2010

Firstpage

1

Lastpage

4

Abstract

Northrop Grumman Aerospace Systems (NGAS) is developing an Advanced Heterogeneous Integration (AHI) process to integrate III-V semiconductor chiplets on CMOS wafers under the Compound Semiconductor Materials on Silicon (COSMOS) DARPA program. The objective of the program is to have a heterogeneous interconnect pitch and length less than 5 um to enable intimate transistor scale integration. This integration will enable significant improvement in dynamic range and bandwidth of high performance mixed signal circuits.

Keywords

CMOS analogue integrated circuits; III-V semiconductors; elemental semiconductors; heterojunction bipolar transistors; indium compounds; silicon; AHI process; CMOS Si technology; III-V semiconductor chiplet; InP HBT; advanced heterogeneous integration; compound semiconductor material; silicon; CMOS integrated circuits; Compounds; Differential amplifiers; Heterojunction bipolar transistors; Indium phosphide; Resistance; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE

Conference_Location

Monterey, CA

ISSN

1550-8781

Print_ISBN

978-1-4244-7437-0

Electronic_ISBN

1550-8781

Type

conf

DOI

10.1109/CSICS.2010.5619667

Filename

5619667