Title :
Mixed-Signal Circuits Using 250nm InP HBT Technology Integrated with 90nm CMOS
Author :
Elliott, K.R. ; Baringer, C. ; Li, James C. ; Royter, Y. ; Patterson, P.R. ; Hussain, T.
Author_Institution :
Microelectron. Lab., HRL Labs. LLC, Malibu, CA, USA
Abstract :
Digital Analog converters using InP HBTs and 90nm CMOS have been designed using the novel HRL integration process developed under the DARPA COSMOS program. These circuits demonstrate that this process is capable of providing a compelling alternative to traditional Si/SiGe BiCMOS implementations for producing highly integrated state-of-the-art mixed signal and digitally-assisted analog circuits.
Keywords :
CMOS integrated circuits; digital-analogue conversion; heterojunction bipolar transistors; indium compounds; mixed analogue-digital integrated circuits; CMOS; DARPA COSMOS program; HBT technology; HRL integration process; InP; digital analog converters; mixed-signal circuits; size 250 nm; size 90 nm; CMOS integrated circuits; Heterojunction bipolar transistors; Indium phosphide; Libraries; Semiconductor device modeling; Silicon; Solid modeling;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium (CSICS), 2010 IEEE
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-7437-0
Electronic_ISBN :
1550-8781
DOI :
10.1109/CSICS.2010.5619668
