DocumentCode
2820175
Title
High-performance NAND flash controller exploiting parallel out-of-order command execution
Author
Kao, Yu-Hsiang ; Huang, Juinn-Dar
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear
2010
fDate
26-29 April 2010
Firstpage
160
Lastpage
163
Abstract
NAND flash memory is one of the most important components in modern non-volatile storage media. However, long command setup time and slow I/O interface frequency of current NAND flash device has been limiting the bandwidth of data transfer. In this paper, we propose a high-performance NAND flash controller architecture by exploiting two techniques - parallel out-of-order execution of multi-die commands and two-plane address translation. By these two techniques, the number of commands being executed in parallel can be maximized and the average execution time per command can thus be greatly reduced to achieve higher performance. The experimental results show that the proposed NAND flash controller can improve the data access performance in both read and program for at least 18% as compared to a baseline NAND flash controller.
Keywords
NAND circuits; flash memories; logic design; random-access storage; NAND flash controller; NAND flash memory; data transfer; non-volatile storage media; parallel out-of-order command execution; Bandwidth; Decoding; Flash memory; Frequency; Logic arrays; Nonvolatile memory; Out of order; Programmable logic arrays; Solid state circuits; Timing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Design Automation and Test (VLSI-DAT), 2010 International Symposium on
Conference_Location
Hsin Chu
Print_ISBN
978-1-4244-5269-9
Electronic_ISBN
978-1-4244-5271-2
Type
conf
DOI
10.1109/VDAT.2010.5496715
Filename
5496715
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