DocumentCode
2820248
Title
SEU sensitive depth in a submicron SRAM technology
Author
Detcheverry, C. ; Ecoffet, R. ; Duzellier, S. ; Lorfevre, E. ; Bruguier, G. ; Barak, J. ; Lifshitz, Y. ; Palau, J.M. ; Gasiot, J.
Author_Institution
Centre d´´Electron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France
fYear
1997
fDate
15-19 Sep 1997
Firstpage
537
Lastpage
541
Abstract
This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 μm SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions deposing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions deposing higher energies (at greater LET)
Keywords
SRAM chips; ion beam effects; 0.6 micron; LET; SEU sensitive depth; critical energy; energy deposition; heavy ion irradiation; simulation; submicron SRAM technology; Analytical models; CMOS technology; Circuit simulation; Context modeling; Error analysis; Extraterrestrial phenomena; Random access memory; Single event upset; Space technology; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location
Cannes
Print_ISBN
0-7803-4071-X
Type
conf
DOI
10.1109/RADECS.1997.698994
Filename
698994
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