Title :
Strain-compensated MQW InGaAsP/InGaAsP gain- and index-coupled laser arrays grown by MOVPE under N2
Author :
Piataev, V. ; Kuphal, E. ; Jochum, S. ; Hansmann, S. ; Janning, H. ; Kempf, B. ; Gobel, R. ; Hubner, B. ; Burkhrd, H.
Author_Institution :
Deutsche Telekom AG, Darmstadt, Germany
Abstract :
Buried index-coupled and gain-coupled distributed feedback (DFB) lasers (λ=1.55 μm) and laser arrays with wavelength spacing between channels of 1.6 nm and 3.2 nm have been realized and investigated on different strain-compensated InGaAsP/InGaAsP MQW structures. Which are grown on InP by MOVPE with constant As/P ratio under N2 as carrier gas for the first time. The grown structures exhibit an extremely good wavelength homogeneity (σ=0.75 nm). The lowest threshold current of 2.3 mA at 20°C has been obtained for uncoated index-coupled DFB lasers. More than 10 mW CW and 70 mW pulsed output power are achieved at an injection current of 200 mA from one facet of a DFB laser with AR coating
Keywords :
III-V semiconductors; MOCVD; buried layers; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 1.55 mum; 1.6 nm; 2.3 mA; 20 C; 200 mA; 3.2 nm; 40 mW; 70 mW; InGaAsP; MOVPE under N2; N2; buried index-coupled laser; distributed feedback laser; gain-coupled laser arrays; good wavelength homogeneity; index-coupled laser arrays; injection current; lowest threshold current; strain-compensated MQW InGaAsP/InGaAsP lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Gas lasers; Indium phosphide; Laser feedback; Optical arrays; Optical pulses; Quantum well devices; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712476
