DocumentCode :
2820522
Title :
CMP pressure control based on dual-modes controller
Author :
Men, Yanwu ; Zhang, Hui ; Zhou, Kai ; Ye, Peiqing ; Lu, Xinchun
Author_Institution :
State Key Lab. of Tribology, Tsinghua Univ., Beijing, China
fYear :
2011
fDate :
15-17 July 2011
Firstpage :
6378
Lastpage :
6382
Abstract :
Chemical Mechanical Polishing (CMP) is the most effective wafer global planarization technology. The quality of polishing not only depends on slurry, but also depends on the precise control of polishing pressure. This paper presents a bang-bang+ dual-modes gain-variable PID controller which is used as the core control strategy to overcome the phenomena of long adjustment time, large overshooting and so on. The strategy has the advantages of the robustness, fast dynamic response of the bang-bang controller and the high steady-state accuracy of the gain-variable PID controller. Experiment results show that the dual-modes controller is feasible, practical and correct.
Keywords :
bang-bang control; chemical mechanical polishing; dynamic response; multivariable control systems; planarisation; pressure control; robust control; three-term control; CMP pressure control; bang-bang controller; chemical mechanical polishing; dual mode gain variable PID controller; dynamic response; overshooting; polishing quality; wafer global planarization technology; Bang-bang control; Chemicals; Laboratories; Missiles; Pressure control; Projectiles; Rockets; Bang-Bang Control; CMP; Dual-modes Control; Gain-variable PID Control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
Conference_Location :
Hohhot
Print_ISBN :
978-1-4244-9436-1
Type :
conf
DOI :
10.1109/MACE.2011.5988501
Filename :
5988501
Link To Document :
بازگشت