Title :
Aspects of selective area epitaxy and their application to integrated optics
Author :
Roberts, D.A. ; Roberts, J.S. ; Button, C.C. ; Pate, M.A. ; Hill, G. ; Claxton, P.A. ; Robson, P.N.
Author_Institution :
Dept. of Electron. & Electr. Eng., Sheffield Univ., UK
Abstract :
The authors have assessed the viability of selective area epitaxy by applying the technique to the fabrication of low loss waveguides and optical modulator structures. Demonstrators have been fabricated by both atmospheric pressure MOCVD and solid source MBE on substrates structured by either wet chemical etching or reactive ion etching (RIE)
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; etching; gallium arsenide; integrated optics; integrated optoelectronics; molecular beam epitaxial growth; optical modulation; optical waveguides; optical workshop techniques; semiconductor growth; GaAs-AlGaAs; MQW p-i-n diodes; atmospheric pressure MOCVD; channel waveguides; integrated optics; integrated optoelectronics; low loss waveguides; metallorganic chemical vapour deposition; optical modulator structures; reactive ion etching; rib waveguides; selective area epitaxy; semiconductor; solid source MBE; substrates; wet chemical etching;
Conference_Titel :
Integrated Optics, IEE Colloquium on
Conference_Location :
London
