Title :
Low residual absorption MQW optical waveguides produced by boron and fluorine impurity induced disordering
Author :
O´Neill, Maire ; Marsh, J.H. ; De La Rue, R.M. ; Roberts, J.S. ; Gwilliam, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., The Univ., Glasgow, UK
Abstract :
The authors report results for neutral impurity IID in GaAs-AlGaAs multiple quantum well (MQW) layers, where the particular impurities investigated were boron and fluorine introduced using ion-implantation. Bandgap increases of up to 100 meV were observed, while, because the impurities are neutral dopants, waveguides formed in the disordered MQW exhibited only small increases in the near bandgap absorption coefficient (≈6 dB cm-1). These results imply that IID is a practical technique for forming interconnecting waveguides in OEICs
Keywords :
III-V semiconductors; aluminium compounds; boron; fluorine; gallium arsenide; integrated optics; ion implantation; optical waveguides; photoluminescence; semiconductor quantum wells; GaAs-AlGaAs:B; GaAs-AlGaAs:F; MQW optical waveguides; impurity induced disordering; integrated optics; integrated opto-electronic circuits; interconnecting waveguides; ion-implantation; low residual absorption waveguides; multiple quantum wells; near bandgap absorption coefficient; neutral impurity IID; photoluminescence; semiconductor;
Conference_Titel :
Integrated Optics, IEE Colloquium on
Conference_Location :
London
