Evaluation of internal efficiency and waveguide loss of 50 nm-period GaInAsP/InP quantum-wire lasers

Author

Kojima, Takashi ; Nakaya, Hiroyuki ; Tanaka, Suguru ; Tamura, Shigeo ; Arai, Shigehisa

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

1998

fDate

11-15 May 1998

Firstpage

365

Lastpage

368

Abstract

Internal quantum efficiency η_i of GaInAsP/InP 20 nm-wide quantum-wire lasers with a period of 50 nm, fabricated by electron-beam lithography, wet chemical etching and OMVPE embedding growth, was evaluated from the cavity length dependence of the differential quantum efficiency. As the result, high internal quantum efficiency η_i~1.0 was obtained at T<200 K, while it decreased with an increase of temperature

Keywords

MOCVD coatings; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; 200 K; 50 nm; 50 nm-period GaInAsP/InP quantum-wire lasers; InGaAsP-InP; OMVPE embedding growth; cavity length dependence; differential quantum efficiency; electron-beam lithography; high internal quantum efficiency; internal efficiency; waveguide loss; wet chemical etching; Chemical lasers; Chemical technology; Indium phosphide; Lithography; Optical device fabrication; Optical waveguides; Threshold current; Waveguide lasers; Wet etching; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712478

Filename

712478