Title :
Evaluation of internal efficiency and waveguide loss of 50 nm-period GaInAsP/InP quantum-wire lasers
Author :
Kojima, Takashi ; Nakaya, Hiroyuki ; Tanaka, Suguru ; Tamura, Shigeo ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Internal quantum efficiency ηi of GaInAsP/InP 20 nm-wide quantum-wire lasers with a period of 50 nm, fabricated by electron-beam lithography, wet chemical etching and OMVPE embedding growth, was evaluated from the cavity length dependence of the differential quantum efficiency. As the result, high internal quantum efficiency ηi~1.0 was obtained at T<200 K, while it decreased with an increase of temperature
Keywords :
MOCVD coatings; electron beam lithography; etching; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor growth; semiconductor quantum wires; vapour phase epitaxial growth; 200 K; 50 nm; 50 nm-period GaInAsP/InP quantum-wire lasers; InGaAsP-InP; OMVPE embedding growth; cavity length dependence; differential quantum efficiency; electron-beam lithography; high internal quantum efficiency; internal efficiency; waveguide loss; wet chemical etching; Chemical lasers; Chemical technology; Indium phosphide; Lithography; Optical device fabrication; Optical waveguides; Threshold current; Waveguide lasers; Wet etching; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712478
