Title :
Fabrication of 1.55 μm oxidized VCSELs with top metamorphic GaAs/GaAlAs and bottom InP/InGaAsP Bragg reflectors
Author :
Starck, C. ; Plais, A. ; Derouin, E. ; Pinquier, A. ; Gaborit, F. ; Fortin, C. ; Goldstein, L. ; Boucart, J. ; Salet, P. ; Carpentier, D. ; Jacquet, J.
Author_Institution :
Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
We present the fabrication of 1.55 μm multi-quantum well vertical cavity surface emitting lasers (VCSEL) grown by gas source MBE on InP substrate. We use a combination of lattice-matched InP/InGaAsP and GaAs/GaAlAs metamorphic reflectors with high reflectivities. Room temperature operation in pulsed mode is achieved. We also demonstrate that selective wet oxidation of GaAlAs can be applied to metamorphic material
Keywords :
aluminium compounds; chemical beam epitaxial growth; gallium arsenide; quantum well lasers; semiconductor growth; surface emitting lasers; 1.55 μm oxidized VCSEL; 1.55 mum; GaAs-GaAlAs; InP-InGaAsP; bottom InP/InGaAsP Bragg reflectors; gas source MBE; high reflectivities; selective wet oxidation; top metamorphic GaAs/GaAlAs Bragg reflectors; Gallium arsenide; Gas lasers; Indium phosphide; Laser modes; Optical device fabrication; Oxidation; Reflectivity; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
Print_ISBN :
0-7803-4220-8
DOI :
10.1109/ICIPRM.1998.712479
