• DocumentCode
    2821
  • Title

    Using {\\rm BCl}_{3} -Based Plasma to Modify Wet-Etching Pattern Sapphire Substrate for Improving the Growth of GaN-Based LEDs

  • Author

    Bo-Wen Lin ; Chen-Yi Niu ; Cheng-Yu Hsieh ; Bau-Ming Wang ; Wen-Ching Hsu ; Ray-Ming Lin ; Wu, Y.C.S.

  • Author_Institution
    Mater. Sci. & Eng. Dept., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • Volume
    25
  • Issue
    4
  • fYear
    2013
  • fDate
    Feb.15, 2013
  • Firstpage
    371
  • Lastpage
    373
  • Abstract
    Wet-etching pattern sapphire substrates (PSS) have been used to grow GaN-based light-emitting diodes (LEDs). However, after wet etching, several sidewall facets are exposed on the patterns of PSS. These sidewall facets would grow zincblende GaN and form irregular voids. In this letter, BCl3-based plasma is used to solve this problem and improve the performance of GaN-based LEDs.
  • Keywords
    III-V semiconductors; gallium compounds; light emitting diodes; sputter etching; voids (solid); wide band gap semiconductors; Al2O3; BCl3-based plasma; GaN; GaN-based LED; GaN-based light-emitting diodes; PSS; sidewall facets; voids; wet-etching pattern sapphire substrate; zincblende GaN; Etching; Gallium nitride; Light emitting diodes; Nanoscale devices; Plasmas; Substrates; ${rm BCl}_{3}$; light-emitting diode (LED); pattern; sapphire;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2013.2238226
  • Filename
    6407764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2821