Title :
Impact of bias, doping and High-K dielectric on RF stability performance of junctionless tri-gate transistor
Author :
Vyas, Lochan ; Akshay, Deshpande ; Sharma, Sanidhya Mohan ; Sivasankaran, K. ; Kannadassan, D. ; Mallick, P.S.
Author_Institution :
Sch. of Electron. Eng., VIT Univ., Vellore, India
Abstract :
This paper presents the effect of process parameter variation such as oxide material, oxide thickness, doping concentration along with bias conditions and different high-k dielectric on RF stability performance of Junctionless Tri-Gate Transistor (JLTGT). The small signal RF parameter is obtained from extracted device parameters using TCAD (Technology Computer Aided Design). The results show that optimized JLTGT shows good RF stability performance.
Keywords :
UHF field effect transistors; doping profiles; high-k dielectric thin films; microwave field effect transistors; semiconductor device reliability; RF stability performance; bias conditions; doping concentration; high-K dielectric effect; junctionless trigate transistor; oxide material; oxide thickness; process variation; Circuit stability; Doping; Logic gates; Performance evaluation; Radio frequency; Stability analysis; Transistors; Junctionless Tri-Gate Transistor (JLTGT); Numerical Simulation; Radio Frequency (RF); stability factor;
Conference_Titel :
Electronics and Communication Systems (ICECS), 2015 2nd International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-7224-1
DOI :
10.1109/ECS.2015.7124810
