Title :
A new test structure for direct extraction of SPICE model parameters for double polysilicon bipolar transistors
Author :
Sanden, Martin ; Zhang, Shi-Li ; Grahn, Jan V. ; Östling, Mikael
Author_Institution :
Dept. of Electron., KTH, Kista, Sweden
Abstract :
Direct extraction of ten core SPICE model parameters for double polysilicon bipolar junction transistors (BJTs) was performed using a new test structure. The test structure was basically identical to a real BJT, but without the intrinsic base. Hence, the extrinsic parasitics of the test structure were identical to the BJT. From the test structure small-signal model, all extrinsic model parameters were directly extracted from the measured scattering parameters over the frequency range of 1 to 18 GHz. The values of the extracted parameters were in good agreement compared to those obtained using other conventional methods
Keywords :
SPICE; elemental semiconductors; microwave bipolar transistors; semiconductor device models; semiconductor device testing; silicon; 1 to 18 GHz; BJTs; SPICE model parameters; Si; direct SPICE model parameter extraction; double polysilicon bipolar junction transistors; double polysilicon bipolar transistors; extrinsic model parameters; extrinsic parasitics; intrinsic base; scattering parameters; test structure; test structure small-signal model; Circuit testing; Conductivity; Contact resistance; Equivalent circuits; Parameter extraction; Performance analysis; Performance evaluation; Predictive models; SPICE; Scattering parameters;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766211
