The impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs

Author

Deen, M. Jamal ; Chen, Chih-Hung

Author_Institution

Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada

fYear

1999

fDate

1999

Firstpage

34

Lastpage

39

Abstract

This paper discusses the impact of noise parameter de-embedding in n-MOSFETs. A method to directly de-embed the parasitic pad effects from the measured noise parameters (minimum noise figure NF_min, equivalent noise resistance R_n, and optimized source reflection coefficient Γ_opt) and the impact of noise parameter de-embedding on the high-frequency noise modeling of MOSFETs is presented. In addition, noise parameter de-embedding using a physically-based pad model is presented. Finally, the results of the two approaches are compared

Keywords

MOSFET; microwave field effect transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; MOSFETs; equivalent noise resistance; high-frequency noise modeling; minimum noise figure; n-MOSFETs; noise parameter de-embedding; noise parameters; optimized source reflection coefficient; parasitic pad effects; physically-based pad model; Bonding; Electric resistance; Electrical resistance measurement; Equivalent circuits; Impedance; MOSFET circuits; Microwave measurements; Noise figure; Noise measurement; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766212

Filename

766212