A capacitance-voltage measurement method for DMOS transistor channel length extraction

Author

Olsson, J. ; Valtonen, R. ; Heinle, U. ; Vestling, L. ; Söderbärg, A. ; Norde, H

Author_Institution

Angstrom Lab., Uppsala Univ., Sweden

fYear

1999

fDate

1999

Firstpage

135

Lastpage

140

Abstract

This paper reports a new measurement method for extraction of sub-micrometer channel lengths in DMOS transistors. The method is based on capacitance-voltage measurements of the gate to source, gate to p-base and gate to drain capacitances. A channel length of 0.3 μm has been measured on DMOS transistors. Numerical device simulations and small-signal capacitance simulations support the results and the measurement principle

Keywords

MOSFET; capacitance; numerical analysis; semiconductor device measurement; semiconductor device models; 0.3 micron; DMOS transistor channel length extraction; DMOS transistors; capacitance-voltage measurement; capacitance-voltage measurement method; channel length; gate to drain capacitance; gate to p-base capacitance; gate to source capacitance; measurement method; measurement principle; numerical device simulations; small-signal capacitance simulations; Capacitance measurement; Capacitance-voltage characteristics; Doping; Electric variables measurement; Length measurement; MOSFETs; Numerical simulation; Testing; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766231

Filename

766231