Title :
A simple physical extraction method for RD-RS of asymmetric MOSFETs
Author :
Blaum, Alfred ; Victory, James ; McAndrew, Colin C.
Author_Institution :
Adv. Circuit Res. Lab.-Eur., Motorola Inc., Le Grand-Saconnex, Switzerland
Abstract :
MOSFETs with different drain and source series resistance, RD and RS, are common both in medium and high power technologies and in deep submicron technologies. Proper modeling of asymmetric MOSFETs requires accurate characterization of RD-R S. This paper presents the concept and the results of a new, simple, and physical extraction technique to determine RD-R S purely based on experimental data. The method makes minimal assumptions about MOSFET drain current modeling
Keywords :
MOSFET; electric resistance; power MOSFET; semiconductor device measurement; semiconductor device models; MOSFET drain current modeling; MOSFETs; asymmetric MOSFETs; drain series resistance; drain-source series resistance difference; modeling; physical extraction method; physical extraction technique; power technology; source series resistance; CMOS technology; Circuits; Conductivity; Data mining; Electrical resistance measurement; Hot carriers; MOS devices; MOSFETs; Medium voltage; Semiconductor device modeling;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766232
