Title :
Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters
Author :
Ismail, Mohammed ; Kim, Dong Yong ; Shin, Hong Kyu
Author_Institution :
solid-State Microelectron. Lab., Ohio State Univ., Columbus, OH, USA
Abstract :
A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed
Keywords :
MOS integrated circuits; active filters; compensation; lumped parameter networks; MOS domain; MOSFET-C filters; compensation; continuous-time integrated filters; finite gain bandwidth effect; parasitic capacitance effects; parasitic capacitance insensitive; Filtering theory; Filters; Laboratories; Lubricating oils; MOSFET circuits; Operational amplifiers; Parasitic capacitance; Prototypes; Resistors; Solid state circuits;
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
DOI :
10.1109/MWSCAS.1990.140877
