DocumentCode
2821715
Title
Finite GB and MOS parasitic capacitance effects in a class of MOSFET-C filters
Author
Ismail, Mohammed ; Kim, Dong Yong ; Shin, Hong Kyu
Author_Institution
solid-State Microelectron. Lab., Ohio State Univ., Columbus, OH, USA
fYear
1990
fDate
12-14 Aug 1990
Firstpage
938
Abstract
A discussion is presented of the effects of the finite op-amp gain bandwidth (GB) and the MOS intrinsic and extrinsic parasitic capacitances on the performance of a recently reported class of MOSFET-C continuous-time integrated filters. This class of filters is designed directly in the MOS domain, without having to develop an intermediate active-RC prototype. It is shown that the structures are insensitive to intrinsic parasitic capacitances. Ways to compensate for the GB effects are proposed
Keywords
MOS integrated circuits; active filters; compensation; lumped parameter networks; MOS domain; MOSFET-C filters; compensation; continuous-time integrated filters; finite gain bandwidth effect; parasitic capacitance effects; parasitic capacitance insensitive; Filtering theory; Filters; Laboratories; Lubricating oils; MOSFET circuits; Operational amplifiers; Parasitic capacitance; Prototypes; Resistors; Solid state circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location
Calgary, Alta.
Print_ISBN
0-7803-0081-5
Type
conf
DOI
10.1109/MWSCAS.1990.140877
Filename
140877
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