Evaluation of test methods and associated test structures for interconnect reliability control

Author

Foley, S. ; Molyneaux, J. ; Mathewson, A.

Author_Institution

Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland

fYear

1999

fDate

1999

Firstpage

167

Lastpage

172

Abstract

A number of fast wafer level test methods exist for interconnect reliability evaluation. The relative abilities of three such methods to predict the quality and reliability of the interconnect over very short test times are evaluated in this work. Four different test structure designs are also evaluated and the results are compared with package level median time to failure (MTF) results. The isothermal test method combined with SWEAT-type (standard wafer-level electromigration accelerated test) structures is shown to be the most suitable combination for interconnect reliability detection and control over very short test times

Keywords

electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; life testing; quality control; SWEAT-type test structures; interconnect quality; interconnect reliability; interconnect reliability control; interconnect reliability detection; isothermal test method; package level median time to failure; standard wafer-level electromigration accelerated test structures; test methods; test structure designs; test structures; test time; wafer level test methods; Electromigration; Manufacturing processes; Metallization; Microelectronics; Monitoring; Packaging; Production; Testing; Tungsten; Wafer scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766237

Filename

766237