Title :
Test structure for measurement of ion stopping power
Author :
Kanata, H. ; Tosaka, Y. ; Ehara, H. ; Satoh, S.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
The stopping powers of various ions in Si are essential for simulation of the soft errors of Si devices induced especially by secondary cosmic-ray neutrons. A new method has been developed for measuring ion stopping powers in Si that employs diodes fabricated on the SOI structure. This technique was applied to He2+ ions, and the obtained stopping power was in good agreement with that obtained from the well known Ziegler formula
Keywords :
cosmic ray interactions; error analysis; integrated circuit measurement; integrated circuit testing; neutron effects; semiconductor diodes; silicon-on-insulator; He; He2+ ions; SOI structure; Si device soft errors; Si ion stopping power; Si-SiO2; Ziegler formula; diode test structure; ion stopping power; ion stopping power measurement; secondary cosmic-ray neutrons; soft errors; test structure; Atomic measurements; Current measurement; Diodes; Energy loss; Energy measurement; Insulation; Loss measurement; Power measurement; Testing; Thickness measurement;
Conference_Titel :
Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on
Conference_Location :
Goteborg
Print_ISBN :
0-7803-5270-X
DOI :
10.1109/ICMTS.1999.766240
