CMOS 1/f noise modelling and extraction of BSIM3 parameters using a new extraction procedure

Author

Vildeuil, J.C. ; Valenza, M. ; Rigaud, D.

Author_Institution

Centre d´´Electron. de Micro-optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France

fYear

1999

fDate

1999

Firstpage

206

Lastpage

211

Abstract

1/f noise is investigated in a set of transistors issued from a 0.8 μm CMOS technology. Measurements have been analysed versus gate and drain biases. Noise parameters for BSIM3 simulation are extracted in all operating regions using a new extraction procedure. As expected, three noise parameters (NOIA, NOIB and NOIC) can model the noise in all operating regimes. Moreover, it is shown that for the studied transistors, the contribution of NOIC is neglible in the saturation range. Some inaccuracies of the BSIM3v3 noise model are pointed out; in particular, the experimental data indicates that for n-channel MOSFETs, the NOIB parameter is V_GS-V_T dependent

Keywords

1/f noise; CMOS integrated circuits; MOSFET; circuit simulation; integrated circuit measurement; integrated circuit noise; 1/f noise; BSIM3 simulation; BSIM3 simulation parameter extraction; BSIM3v3 noise model; CMOS 1/f noise modelling; CMOS technology; drain bias; gate bias; n-channel MOSFETs; noise model; noise parameters; operating regimes; parameter extraction procedure; 1f noise; CMOS technology; Capacitance; Data mining; Equations; MOSFETs; Noise measurement; Parameter extraction; Performance evaluation; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1999. ICMTS 1999. Proceedings of the 1999 International Conference on

Conference_Location

Goteborg

Print_ISBN

0-7803-5270-X

Type

conf

DOI

10.1109/ICMTS.1999.766244

Filename

766244