DocumentCode :
2821934
Title :
Glitch-induced within-die variations of dynamic energy in voltage-scaled nano-CMOS circuits
Author :
Kamel, Dina ; Hocquet, Cédric ; Standaert, François-Xavier ; Flandre, Denis ; Bol, David
Author_Institution :
Microelectron. Lab., Univ. Catholique de Louvain (UCL), Louvain-la-Neuve, Belgium
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
518
Lastpage :
521
Abstract :
Variability strongly impacts performances of nanometer CMOS digital circuits. In this paper, we experimentally study the effects of variability on dynamic energy consumption of 65nm logic circuits, considering deep voltage scaling for low-power applications. While we confirm that variations in dynamic energy at 1V are small and dominated by die-to-die correlated capacitance fluctuations, we report for the first time that within-die uncorrelated delay variability magnifies dynamic energy variations at lower voltages by a factor 5×. Indeed, random glitches are generated by variability-induced unbalanced logic paths, which affect the activity factor of combinatorial circuits. The associated normalized dynamic power variations at 0.4V are comparable to die-to-die leakage power variations.
Keywords :
CMOS digital integrated circuits; combinational circuits; low-power electronics; nanoelectronics; power aware computing; combinatorial circuit; deep voltage scaling; die uncorrelated delay variability; die-to-die correlated capacitance fluctuation; die-to-die leakage power variation; dynamic energy consumption; dynamic energy variation; glitch-induced within-die variation; logic circuit; low-power application; nanometer CMOS digital circuit; size 65 nm; variability-induced unbalanced logic path; voltage 0.4 V; voltage 1 V; voltage-scaled nano-CMOS circuit; CMOS integrated circuits; Capacitance; Delay; Integrated circuit modeling; Logic gates; Ring oscillators; Semiconductor device measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ESSCIRC, 2010 Proceedings of the
Conference_Location :
Seville
ISSN :
1930-8833
Print_ISBN :
978-1-4244-6662-7
Type :
conf
DOI :
10.1109/ESSCIRC.2010.5619757
Filename :
5619757
Link To Document :
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