DocumentCode
2822224
Title
Terahertz imaging with CMOS/BiCMOS process technologies
Author
Pfeiffer, Ullrich R. ; Öjefors, Erik
Author_Institution
High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
52
Lastpage
60
Abstract
Contrary to the common belief, silicon devices may very well operate beyond their cut-off frequency. The push towards terahertz frequencies, though, presents both challenges and opportunities for emerging applications. This paper summarizes recent attempts to use foundry-level silicon process technologies for the realization of terahertz electronic systems.
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; terahertz wave imaging; CMOS/BiCMOS process; cut-off frequency; silicon devices; terahertz electronic systems; terahertz imaging; CMOS integrated circuits; CMOS technology; Detectors; Imaging; Pixel; Receivers; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
ESSCIRC, 2010 Proceedings of the
Conference_Location
Seville
ISSN
1930-8833
Print_ISBN
978-1-4244-6662-7
Type
conf
DOI
10.1109/ESSCIRC.2010.5619773
Filename
5619773
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