DocumentCode
282253
Title
IEE Colloquium on `Measurements and Modelling of Microwave Devices and Circuits´ (Digest no.124)
fYear
1989
fDate
32814
Abstract
The following topics were dealt with: broadband TEM coupler design; nonlinear modelling of IMPATT diodes; amplifier and oscillator models; de-embedding schemes applicable to nonlinear MESFET modelling; CAD of MESFET doubler circuit; 0.3 μm GaAs packaged MESFET de-embedding technique; nonlinear device modelling via harmonic balance; and GaAs MESFET parasitic resistances determination
Keywords
Schottky gate field effect transistors; microwave devices; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave circuits; solid-state microwave devices; CAD; GaAs; IMPATT diodes; MESFET; MESFET doubler circuit; amplifier; broadband TEM coupler design; de-embedding schemes; harmonic balance; microwave circuits; nonlinear modelling; oscillator; parasitic resistances; solid state microwave devices;
fLanguage
English
Publisher
iet
Conference_Titel
Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198909
Link To Document