DocumentCode
282257
Title
CAD of MESFET doubler circuit
Author
Tang, A. ; Stewart, J.A.C. ; Fusco, V.F. ; McKeown, J.J.
Author_Institution
Dept. of Electr. & Electron. Eng., Queen´´s Univ. of Belfast, UK
fYear
1989
fDate
32814
Firstpage
42522
Lastpage
42525
Abstract
A requirement exists for local oscillators to provide several mW of power at frequencies from 10 GHz up to 60 GHz and above. One method of obtaining this local oscillator power employs a dielectric resonator stabilised oscillator (DRO), followed by a doubler or tripler circuit. By incorporating an active device, e.g. GaAs MESFET or HEMT in the multiplier circuit, conversion gain or low conversion loss is feasible. The authors describe the practical implementation of a MESFET doubler, from 7 GHz to 14 GHz. The doubler which uses an NE71000 chip device is the precursor of a 14 GHz circuit, with the aim of validating the design philosophy and practical implementation
Keywords
Schottky gate field effect transistors; circuit CAD; field effect transistor circuits; frequency multipliers; solid-state microwave circuits; 14 GHz; 7 GHz; CAD; MESFET doubler circuit; NE71000 chip device; SHF; circuit discontinuity model; computer aided design; harmonic balance design procedure; microwave circuits; multiplier circuit; optimisation;
fLanguage
English
Publisher
iet
Conference_Titel
Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
198916
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