• DocumentCode
    282258
  • Title

    Seeing through the package of a 0.3 μm GaAs MESFET

  • Author

    Bridge, J.P. ; Hill, A.J. ; Ladbrooke, P.H. ; Rycroft, C. H D ; Bali, S.M.

  • Author_Institution
    GaAs Code Ltd., St. John´´s Innovation Centre, Cambridge, UK
  • fYear
    1989
  • fDate
    32814
  • Firstpage
    42552
  • Lastpage
    42557
  • Abstract
    A new method for de-embedding GaAs FET or HEMT chip data from measurements made on packaged devices has been described. The method is based on physically meaningful constraints applied to chip devices, and has been verified for a commonly-used GaAs FET. The method enables better understanding of the application of packaged devices in hybrid microwave integrated circuits
  • Keywords
    III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; hybrid integrated circuits; microwave integrated circuits; packaging; semiconductor device models; solid-state microwave devices; 0.3 micron; GaAs; III-IV semiconductors; MESFET; MIC; NEC71083 packaged FET; chip data de-embedding; de-embedding; hybrid microwave integrated circuits; package;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    198917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=282258