Title :
Nonlinear device modelling via harmonic balance
Author_Institution :
THORN EMI Central Res. Lab., Hayes, UK
Abstract :
An improved technique is presented for modelling the dynamic, large-signal properties of nonlinear microwave devices such as GaAs MESFETs. The method is based on repeated harmonic balance analysis of a simple nonlinear circuit, together with spectral measurements of the device under test. The approach is distinct from commonly used methods which rely on small-signal network analyser measurements. Many of the sources of inconsistency in such methods have been avoided, making more reliable circuit analysis possible
Keywords :
III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; microwave measurement; semiconductor device models; semiconductor device testing; solid-state microwave devices; GaAs; MESFETs; device modelling; dynamic properties; equivalent circuits; harmonic balance; large-signal properties; nonlinear circuit; nonlinear microwave devices; reliable circuit analysis; spectral measurements;
Conference_Titel :
Measurements and Modelling of Microwave Devices and Circuits, IEE Colloquium on
Conference_Location :
London
