A travelling wave electrode Mach-Zehnder 40 Gb/s demultiplexer based on strain compensated GaInAs/AlInAs tunnelling barrier MQW structure

Author

Morl, L. ; Bornholdt, C. ; Hoffmann, D. ; Matzen, K. ; Mekonnen, G.G. ; Reier, F.W.

Author_Institution

Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany

fYear

1998

fDate

11-15 May 1998

Firstpage

403

Lastpage

406

Abstract

In this work high bandwidth and polarization independence were tackled by employing a travelling wave electrode and a tunnelling barrier QW (TBQW) structure, respectively, as the basic guidelines in the design of the switching element, a Mach-Zehnder interferometer (MZI). With a small variation of the waveguide network connecting the MZI either a time division demultiplexer (DEMUX) or a modulator were fabricated. The development of the DEMUX is part of the European ACTS HIGHWAY project

Keywords

III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; demultiplexing equipment; electro-optical modulation; electro-optical switches; gallium arsenide; indium compounds; optical communication equipment; optical fibre communication; semiconductor quantum wells; semiconductor superlattices; tunnelling; European ACTS HIGHWAY project; GaInAs-AlInAs; Mach-Zehnder interferometer; high bandwidth; modulator; polarization independence; strain compensated GaInAs/AlInAs tunnelling barrier MQW structure; switching element; time division demultiplexer; travelling wave electrode; travelling wave electrode Mach-Zehnder demultiplexer; tunnelling barrier QW; waveguide network; Capacitive sensors; Couplers; Electrodes; Optical fiber polarization; Optical modulation; Optical polarization; Optical waveguides; Switches; Tellurium; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1998 International Conference on

Conference_Location

Tsukuba

ISSN

1092-8669

Print_ISBN

0-7803-4220-8

Type

conf

DOI

10.1109/ICIPRM.1998.712488

Filename

712488