Title :
A high speed 256-bit carry look ahead adder design using 22nm strained silicon technology
Author :
Shriram, S. ; Ajayan, J. ; Vivek, K. ; Nirmal, D. ; Rajesh, V.
Author_Institution :
Dept. of ECE, MIT, Puducherry, India
Abstract :
In this paper, a high speed 256-bit carry look ahead adder has been designed using 22nm strained silicon technology. The proposed adder combines the advantage of both the static and dynamic designs, which exhibits lower leakage, higher noise immunity and high speed. The speed performance of the proposed 256-bit adder is significantly improved by computing the even and the odd carries separately by using two separate Manchester carry chains. The circuit is simulated in HSPICE in the high performance 22nm PTM strained silicon CMOS technology with a supply voltage of VDD = 0.8V. The simulation results show that the proposed 256bit adder implemented using 8-bit adder modules shows significant operating speed improvement compared to the conventional 256-bit adder based on the standard 4-bit MCC adder modules.
Keywords :
CMOS integrated circuits; SPICE; adders; high-speed integrated circuits; silicon; HSPICE; MCC adder modules; Manchester carry chains; PTM strained CMOS technology; Si; dynamic designs; high speed carry look ahead adder module design; noise immunity; size 22 nm; speed performance; static designs; supply voltage; voltage 0.8 V; word length 256 bit; word length 8 bit; Adders; Computer architecture; Delays; Leakage currents; Logic gates; Silicon; Temperature; Carry look ahead adders; Domino logic; Manchestor carry chain; noise immunity; technology scaling;
Conference_Titel :
Electronics and Communication Systems (ICECS), 2015 2nd International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-7224-1
DOI :
10.1109/ECS.2015.7124884