Title :
Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams
Author :
Ecoffet, R. ; Duzellier, S. ; Barak, J. ; Levinson, J. ; Lifshitz, Y. ; Hass, M. ; Inguimbert, C. ; Detcheverry, C.
Author_Institution :
CNES, Toulouse, France
Abstract :
Low energy, low range ions are used for creating various conditions for energy deposition in structures responsible for SEU effects. Sensitive volume thicknesses found using this method for a set of sub-micronic SRAMs and DRAMs range from 1 to 20 μm
Keywords :
DRAM chips; SRAM chips; ion beam effects; DRAM; SEU; SRAM; critical energy; energy deposition; heavy ion beam irradiation; sensitive volume thickness; single event upset; Degradation; Ion accelerators; Parameter estimation; Protons; Random access memory; Resumes; Shape; Single event transient; Single event upset; Testing;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.699008
