Title :
SU8 resist plasma etching and its optimisation
Author :
Hong, Guodong ; Holmes, Andrew S. ; Heaton, Mark E.
Author_Institution :
Dept. of Electr. & Electron. Eng., Imperial Coll., London, UK
Abstract :
The thick photoresist SU8, by virtue of its good mechanical durability, water impermeability and dielectric properties on polymerisation, is widely used as a resin for making high aspect ratio, functional MEMS device structures and packaging parts. However, the difficulty associated with removal, stripping or repatterning of the polymerised SU8 remains a serious issue. This paper presents a novel process, based on O2/SF6 plasma etching, for patterning or removal of fully cross-linked SU8. The Taguchi methodology is used to optimise the O2/SF6 mix for a high etch rate and low under cut.
Keywords :
Taguchi methods; dielectric devices; dielectric materials; durability; micromechanical devices; photoresists; resins; sputter etching; O2/SF6 plasma etching; SU8 resist plasma etching rate; Taguchi methodology; cross-linked SU8; dielectric properties; functional MEMS device structure; mechanical durability; photoresist; resin; Dielectric devices; Etching; Mechanical factors; Plasma applications; Plasma devices; Plasma properties; Polymers; Resins; Resists; Water;
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS 2003. Symposium on
Print_ISBN :
0-7803-7066-X
DOI :
10.1109/DTIP.2003.1287050
