Title :
A physical GaAs MESFET model implemented in SPICE
Author :
Ayyar, Shekar G. ; Andreou, Andreas G. ; Westgate, Charles R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA
Abstract :
A new approach is presented for including physical GaAs MESFET models in SPICE. The approach is used to incorporate in SPICE 3d1 a physical model based on a two-piece velocity-field approximation for GaAs. Temperature-dependent effects are included in the physical model. Good agreement between measured and simulated data is obtained
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; semiconductor device models; GaAs; III-V semiconductors; MESFET model; SPICE; physical model; temperature dependent effects; two-piece velocity-field approximation; Circuit simulation; Current measurement; Electron mobility; Equations; Gallium arsenide; MESFETs; SPICE; Temperature; Threshold voltage; Velocity measurement;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176110
