• DocumentCode
    2823214
  • Title

    Large full-well capacity stitched CMOS image sensor for high temperature applications

  • Author

    Durini, Daniel ; Matheis, Frank ; Nitta, Christian ; Brockherde, Werner ; Hosticka, Bedrich J.

  • Author_Institution
    Fraunhofer Inst. for Microelectron. Circuits & Syst. (IMS), Duisburg, Germany
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    130
  • Lastpage
    133
  • Abstract
    A novel CMOS pixel architecture is presented, which fulfills the need for acquisition of very high photon fluxes at high temperatures. A buried photodiode based pixel structure was analysed in detail, and then applied to fabricate the 256 × 256 large area imager sensor in a standard 0.5μm CMOS process using mask reticle stitching.
  • Keywords
    CMOS image sensors; photodiodes; reticles; CMOS pixel architecture; buried photodiode; full-well capacity stitched CMOS image sensor; high temperature applications; mask reticle stitching; pixel structure; size 0.5 mum; Computer architecture; Dark current; Noise; Photodiodes; Pixel; Temperature measurement; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    ESSCIRC, 2010 Proceedings of the
  • Conference_Location
    Seville
  • ISSN
    1930-8833
  • Print_ISBN
    978-1-4244-6662-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.2010.5619823
  • Filename
    5619823
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2823214