DocumentCode :
2823279
Title :
A novel method for determining Young´s modulus of thin films by micro-strain gauges
Author :
Chi Hsiang Pan
Author_Institution :
Nat. Chin-Yi Inst. of Technol., Taichung, Taiwan
fYear :
2003
fDate :
5-7 May 2003
Firstpage :
367
Lastpage :
372
Abstract :
This work presents a novel method for determining Young´s modulus of thin films with compact micromachined test structures and without using any extra load. The test structures comprise of a pair of micro-strain gauges and a cantilever beam. An analytical model is derived to extract the Young´s modulus of test structures. Notably, both Young´s modulus and residual stress can be simultaneously determined; thus we can correlate Young´s modulus and residual stress. The micromachined test structures employed in the measurement are made of low-pressure chemical-vapor deposition (LPCVD) undoped polycrystalline silicon films. A conventional surface-sacrificial layer micromachining technique with one mask is used to fabricate the structures. The obtained Young´s modulus is reduced a little as residual stress increases. The average value of the obtained Young´s modulus is 169 G Pa, and the residual stress calibrated from the strain gauge is 211 MPa.
Keywords :
CVD coatings; Young´s modulus; elemental semiconductors; internal stresses; semiconductor thin films; silicon; Si; Young´s modulus; cantilever beam; compact micromachined test structures; low pressure chemical vapor deposition; mask; microstrain gauges; polycrystalline silicon films; residual stress; Analytical models; Capacitive sensors; Chemicals; Micromachining; Residual stresses; Semiconductor films; Silicon; Structural beams; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Test, Integration and Packaging of MEMS/MOEMS 2003. Symposium on
Print_ISBN :
0-7803-7066-X
Type :
conf
DOI :
10.1109/DTIP.2003.1287070
Filename :
1287070
Link To Document :
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