Design of 2.4GHz power amplifier used in WLAN 802.11b by pHEMT

Author

JunHong, Dong ; Qifeng, Wang ; Feng, Xie

Author_Institution

Electron. Coll. of Eng., Naval Univ. of Eng., Wuhan, China

Volume

1

fYear

2010

fDate

21-24 May 2010

Abstract

This paper introduces the design of a 2.4GHz class AB power amplifier with Win 0.15 μm InGaAs pHEMT technology by using Agilent ADS software. It consists of two-stage amplifiers. The voltage parallel negative feedback method and small resistors in series with the gates of transistors are used to augment the stability of the circuit. This power amplifier can transmit 28.8dBm output power to a 50Ω load at 1dB compression point. The power added efficiency is 30.2% at 1dB compression point and the power gain is 30.2dB.

Keywords

III-V semiconductors; UHF power amplifiers; gallium arsenide; high electron mobility transistors; indium compounds; telecommunication standards; wireless LAN; Agilent ADS software; InGaAs; UHF power amplifier; WLAN 802.11b; class AB power amplifier; frequency 2.4 GHz; gain 30.2 dB; pHEMT; resistance 50 ohm; transistor gates; two-stage amplifiers; voltage parallel negative feedback; Circuit stability; Feedback circuits; Indium gallium arsenide; Negative feedback; PHEMTs; Power amplifiers; Power generation; Resistors; Voltage; Wireless LAN; 1dB Compression Point; Load-Pull; Power Added Efficiency; Radio Frequency IC;

fLanguage

English

Publisher

ieee

Conference_Titel

Future Computer and Communication (ICFCC), 2010 2nd International Conference on

Conference_Location

Wuhan

Print_ISBN

978-1-4244-5821-9

Type

conf

DOI

10.1109/ICFCC.2010.5497334

Filename

5497334