Theoretical simulation and experimental study of phosphorus concentration profiles in laser doped crystalline silicon solar cells

Author

Tao, Li ; Chunlan, Zhou ; Zhengang, Liu ; Wenjing, Wang

Author_Institution

Key Lab. of Solar Thermal Energy & Photovoltaic Syst., CAS, Beijing, China

fYear

2011

fDate

15-17 July 2011

Firstpage

7070

Lastpage

7073

Abstract

In this paper, a nonlinear numerical model of laser heating on crystalline silicon solar cells has been established based on the thermodynamic method. According to the non steady temperature field gained by finite difference method, variation characteristics of melt front as a function of time are described during laser melting of crystalline silicon. Considering the features of liquid phase diffusion of phosphorus atoms in melting silicon, theoretical simulation for phosphorus diffusion behavior and the evolution of phosphorus concentration profiles at various times are achieved by the image method. The theoretical phosphorus concentration profile is in good agreement with the corresponding experimental ECV data.

Keywords

finite difference methods; laser materials processing; melting; nonlinear equations; silicon; solar cells; ECV data; finite difference method; laser doped crystalline silicon solar cells; laser heating; nonlinear numerical model; nonsteady temperature field; phosphorus atom liquid phase diffusion; phosphorus concentration profiles; silicon melting; thermodynamic method; Annealing; Chemical lasers; Laser modes; Laser theory; Photovoltaic cells; Physics; Silicon; concentration profile; crystalline silicon solar cells; laser doped; melt front;

fLanguage

English

Publisher

ieee

Conference_Titel

Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on

Conference_Location

Hohhot

Print_ISBN

978-1-4244-9436-1

Type

conf

DOI

10.1109/MACE.2011.5988678

Filename

5988678