Dual band CMOS power amplifier for WLAN applications

Author

Jou, Christina F. ; Cheng, Kuo-Hua ; Lin, Chia-Min ; Chen, Jia-Liang

Author_Institution

Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1227

Abstract

A 2.4 GHz / 5.2 GHz dual band CMOS power amplifier (PA) with a 21-dBm output power using 0.25-μm 1P5M standard CMOS process is described. In this paper, we present a CMOS PA with a single input and a single output signal chain which simultaneously optimized for wireless local area network (WLAN) 2.4 GHz / 5.2 GHz applications designed on Rogers RO4003 printed-circuit-board (PCB). The simulated dual-band PA biased at Class-A exhibiting P_|dB= 21dBm in both 2.4 GHz and 5.2 GHz with power added efficiency (PAE) = 26% and PAE = 18% separately. The performances of the designed PA presents the standard CMOS process has the potential for the PAs of 2.4 GHz / 5.2 GHz WLAN applications.

Keywords

CMOS integrated circuits; UHF power amplifiers; integrated circuit design; microwave power amplifiers; printed circuits; wireless LAN; 0.25 micron; 2.4 GHz; 5.2 GHz; Rogers RO4003 printed circuit board; dual band CMOS power amplifier; wireless local area network; CMOS process; Circuits; Costs; Dual band; Local area networks; MOS devices; Power amplifiers; Radio frequency; Voltage; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562516

Filename

1562516