Title :
Transconductor/multiplier circuits for gallium arsenide technology. I. Synthesis
Author :
Haigh, D.G. ; Toumazou, C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
Abstract :
A synthesis procedure for transconductor/multiplier circuits is developed. This procedure is based on the square-law Id versus Vgs characteristics of the GaAs MESFET. It is implemented by current differencing using source and sink current circuits preceded by voltage processing circuits using current mirror and source follower building blocks. The approach leads to considerable flexibility and is a powerful tool for the development of novel circuits
Keywords :
III-V semiconductors; Schottky gate field effect transistors; active networks; analogue circuits; field effect integrated circuits; gallium arsenide; multiplying circuits; GaAs; GaAs MESFET; VCCS; current differencing; current mirror; flexibility; multiplier circuits; semiconductors; sink current circuits; source current circuits; source follower; square law characteristics; synthesis procedure; transconductor circuits; voltage processing circuits; Circuit optimization; Circuit synthesis; Difference equations; Gallium arsenide; MESFET circuits; Mirrors; Transconductance; Transconductors; Tunable circuits and devices; Voltage;
Conference_Titel :
Circuits and Systems, 1991., IEEE International Sympoisum on
Print_ISBN :
0-7803-0050-5
DOI :
10.1109/ISCAS.1991.176178
