Transconductor/multiplier circuits for gallium arsenide technology. I. Synthesis

Author

Haigh, D.G. ; Toumazou, C.

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK

fYear

1991

fDate

11-14 Jun 1991

Firstpage

2999

Abstract

A synthesis procedure for transconductor/multiplier circuits is developed. This procedure is based on the square-law Id versus Vgs characteristics of the GaAs MESFET. It is implemented by current differencing using source and sink current circuits preceded by voltage processing circuits using current mirror and source follower building blocks. The approach leads to considerable flexibility and is a powerful tool for the development of novel circuits

Keywords

III-V semiconductors; Schottky gate field effect transistors; active networks; analogue circuits; field effect integrated circuits; gallium arsenide; multiplying circuits; GaAs; GaAs MESFET; VCCS; current differencing; current mirror; flexibility; multiplier circuits; semiconductors; sink current circuits; source current circuits; source follower; square law characteristics; synthesis procedure; transconductor circuits; voltage processing circuits; Circuit optimization; Circuit synthesis; Difference equations; Gallium arsenide; MESFET circuits; Mirrors; Transconductance; Transconductors; Tunable circuits and devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., IEEE International Sympoisum on

Print_ISBN

0-7803-0050-5

Type

conf

DOI

10.1109/ISCAS.1991.176178

Filename

176178