• DocumentCode
    2824257
  • Title

    Latched differential FET logic

  • Author

    Wood, Steven W. ; Smith, Kenneth C. ; Gulak, P. Glenn

  • Author_Institution
    Dept. of Electr. Eng., Toronto Univ., Ont., Canada
  • fYear
    1991
  • fDate
    11-14 Jun 1991
  • Firstpage
    3011
  • Abstract
    A new circuit topology is proposed for creating complex logic circuits in GaAs. Latched differential FET logic (LDFL) is a fully differential logic family that provides complex logic function capability, tolerance to threshold voltage variations, and complementary, latched-function outputs. LDFL is capable of performing up to eleven levels of logic in one gate, while still giving excellent performance. LDFL also provides improved noise margins due to the use of bootstrapped loads and significantly reduces the load-to-logic ratioing constraint. A nine-level LDFL gate has a delay of 1.7 ns and a static power dissipation of 4 mW as demonstrated in simulations of 4-bit digital comparator circuits
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; comparators (circuits); field effect integrated circuits; gallium arsenide; integrated logic circuits; 1.7 ns; 4 bit; 4 mW; GaAs; LDFL; MESFET; bootstrapped loads; circuit topology; complementary outputs; complex logic circuits; complex logic function capability; delay; differential logic family; digital comparator circuits; latched differential FET logic; latched-function outputs; load-to-logic ratioing constraint; logic levels per gate; noise margins; power dissipation; semiconductors; tolerance to threshold voltage variations; Circuit noise; Circuit topology; FETs; Gallium arsenide; Logic circuits; Logic functions; Logic gates; Noise reduction; Signal to noise ratio; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 1991., IEEE International Sympoisum on
  • Print_ISBN
    0-7803-0050-5
  • Type

    conf

  • DOI
    10.1109/ISCAS.1991.176179
  • Filename
    176179