Fully integrated Colpitts VCOs using above IC high-Q inductors for GSM 900MHz/1800Mz dual band offset-PLL transmitter

Author

Abdou, Ahmed S. ; Abdelrheem, Tamer A. ; Elhak, Hany Y. ; Hafez, Amr N.

Author_Institution

MEMSCAP, Cairo, Egypt

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1295

Abstract

Thin paper presents the design and Implementation of fully integrated transmit VCOs using Above IC (AIC) high Q inductors for a dual band transmit offset-PLL used for GSM 900MHz/1800MHz application. The VCOs achieve the phase noise and RF power requirements for this application. For 900MHz the VCO phase noise is -164dBc/Hz with output RF power of 4dBm, while for 1800MHz band the VCO phase noise is -157dBc/Hz with output power of 3.5dBm. The circuit is implemented in a 0.35μm SiGe BiCMOS process with f_T of 60GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; cellular radio; phase locked loops; phase noise; radio transmitters; radiofrequency integrated circuits; radiofrequency oscillators; voltage-controlled oscillators; 0.35 micron; 1800 MHz; 60 GHz; 900 MHz; Colpitts voltage controlled oscillator; GSM dual band offset transmitter; PLL transmitter; RF power; SiGe; SiGe BiCMOS process; high Q inductor; phase noise; Application specific integrated circuits; Dual band; GSM; Inductors; Phase noise; Power generation; Radio frequency; Silicon germanium; Transmitters; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562532

Filename

1562532