RF transistor macromodeling with substrate effect in power amplifier design

Author

El-Sabban, Aida A. ; Haddara, Hisham ; Ragai, Hani F.

Author_Institution

VLSI Design Center, AOIE, Nasr, Egypt

Volume

3

fYear

2003

fDate

27-30 Dec. 2003

Firstpage

1307

Abstract

In this paper, a class AB power amplifier is designed in the 2.45 GHz frequency band using a standard 0.35μm CMOS digital process. The transistor RF modeling including the substrate effect is emphasized in this design. The power amplifier delivers 24dBm of output power with an efficiency of 34.5%, PAE of 30.5% and a power gain of 9.5dB under 3.3V supply. Effect of pads and bondwires are taken into consideration during the design process. The coil used for tuning purposes is a standard above IC MEMS coil in order to increase the efficiency of the PA. Finally, a comparison between the performance of the PA with and without the external subcircuit is given.

Keywords

CMOS integrated circuits; integrated circuit modelling; power amplifiers; substrates; transistors; 0.35 micron; 2.45 GHz; 3.3 V; 9.5 dB; CMOS digital process; RF transistor macromodeling; bondwires; pads; power amplifier design; substrate effect; substrate network; Bonding; CMOS process; Coils; Micromechanical devices; Power amplifiers; Power generation; Process design; Radio frequency; Radiofrequency amplifiers; Semiconductor device modeling; CMOS; Power amplifier; RF transistor modeling; Substrate network;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003 IEEE 46th Midwest Symposium on

ISSN

1548-3746

Print_ISBN

0-7803-8294-3

Type

conf

DOI

10.1109/MWSCAS.2003.1562535

Filename

1562535