• DocumentCode
    2824657
  • Title

    Self-heating based model for polysilicon resistors

  • Author

    Tatinian, William ; Simoen, Eddy ; Ouassif, Nordin ; Desoete, Bart ; Gillon, Renaud ; Pannier, Philippe

  • Author_Institution
    AMI Semicond., Oudenaarde, Belgium
  • Volume
    3
  • fYear
    2003
  • fDate
    27-30 Dec. 2003
  • Firstpage
    1337
  • Abstract
    This paper proposes a physical model for poly resistors including a methodology for the determination of the corner models based on the self heating of the device. The thermal resistance can easily be extracted from DC and temperature measurements. This model allows to get rid of the commonly used voltage coefficients.
  • Keywords
    resistors; semiconductor device models; polysilicon resistors; self-heating based model; thermal resistance; Ambient intelligence; Circuits; Electric resistance; Heating; Resistors; Surface resistance; Temperature dependence; Temperature measurement; Thermal resistance; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
  • ISSN
    1548-3746
  • Print_ISBN
    0-7803-8294-3
  • Type

    conf

  • DOI
    10.1109/MWSCAS.2003.1562542
  • Filename
    1562542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2824657