DocumentCode :
2824657
Title :
Self-heating based model for polysilicon resistors
Author :
Tatinian, William ; Simoen, Eddy ; Ouassif, Nordin ; Desoete, Bart ; Gillon, Renaud ; Pannier, Philippe
Author_Institution :
AMI Semicond., Oudenaarde, Belgium
Volume :
3
fYear :
2003
fDate :
27-30 Dec. 2003
Firstpage :
1337
Abstract :
This paper proposes a physical model for poly resistors including a methodology for the determination of the corner models based on the self heating of the device. The thermal resistance can easily be extracted from DC and temperature measurements. This model allows to get rid of the commonly used voltage coefficients.
Keywords :
resistors; semiconductor device models; polysilicon resistors; self-heating based model; thermal resistance; Ambient intelligence; Circuits; Electric resistance; Heating; Resistors; Surface resistance; Temperature dependence; Temperature measurement; Thermal resistance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
ISSN :
1548-3746
Print_ISBN :
0-7803-8294-3
Type :
conf
DOI :
10.1109/MWSCAS.2003.1562542
Filename :
1562542
Link To Document :
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