DocumentCode
2824720
Title
The modeling, design and optimization of multi-junction photovoltaic devices
Author
Michael, Sherif ; Green, Max
Author_Institution
Dept. of Electr. & Comput. Eng., Naval Postgraduate Sch., Monterey, CA, USA
Volume
3
fYear
2003
fDate
27-30 Dec. 2003
Firstpage
1350
Abstract
In this paper a recent method for developing a realistic model of any type of solar cell is presented. Taking into account the high cost of research and experimentation involved with the development of advanced cells, we present here this innovative methodology. A new four-junction solar cell was simulated and optimized to predict the future efficiency and power output of this prospective device. To accomplish this, exotic materials such as indium gallium phosphide (InGaP) and indium gallium nitride arsenide (InGaNAs), were empirically given materials properties to precisely model them. The methodology and design considerations for this process are explained.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; photovoltaic cells; solar cells; InGaNAs; InGaP; multijunction photovoltaic devices; solar cell; Costs; Design optimization; Gallium compounds; Gallium nitride; III-V semiconductor materials; Indium; Photovoltaic cells; Photovoltaic systems; Predictive models; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
ISSN
1548-3746
Print_ISBN
0-7803-8294-3
Type
conf
DOI
10.1109/MWSCAS.2003.1562545
Filename
1562545
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