Title :
The modeling, design and optimization of multi-junction photovoltaic devices
Author :
Michael, Sherif ; Green, Max
Author_Institution :
Dept. of Electr. & Comput. Eng., Naval Postgraduate Sch., Monterey, CA, USA
Abstract :
In this paper a recent method for developing a realistic model of any type of solar cell is presented. Taking into account the high cost of research and experimentation involved with the development of advanced cells, we present here this innovative methodology. A new four-junction solar cell was simulated and optimized to predict the future efficiency and power output of this prospective device. To accomplish this, exotic materials such as indium gallium phosphide (InGaP) and indium gallium nitride arsenide (InGaNAs), were empirically given materials properties to precisely model them. The methodology and design considerations for this process are explained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photovoltaic cells; solar cells; InGaNAs; InGaP; multijunction photovoltaic devices; solar cell; Costs; Design optimization; Gallium compounds; Gallium nitride; III-V semiconductor materials; Indium; Photovoltaic cells; Photovoltaic systems; Predictive models; Solar power generation;
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Print_ISBN :
0-7803-8294-3
DOI :
10.1109/MWSCAS.2003.1562545
