Title :
A novel ultra-low-energy bulk dynamic threshold PMOS scheme
Author :
Elgharbawy, Walid ; Bayoumi, Magdy
Author_Institution :
Center for Adv. Comput. Studies, Louisiana Univ., Lafayette, LA, USA
Abstract :
In this paper we introduce a new dynamic threshold MOSFET scheme for PMOS transistors in bulk-CMOS technology. The proposed scheme can be applied to subthreshold dynamic and static circuits. The proposed scheme is shown to have 54% saving in energy if compared to the regular subthreshold DTPMOS scheme, which makes it attractive for ultra-low-energy moderate-performance devices. The proposed scheme is also shown to be more robust against temperature variations.
Keywords :
CMOS integrated circuits; MOSFET; integrated circuit design; threshold elements; MOSFET; PMOS transistors; bulk-CMOS technology; dynamic threshold PMOS; subthreshold DTPMOS scheme; subthreshold dynamic circuits; subthreshold static circuits; ultra-low-energy moderate-performance devices; CMOS logic circuits; CMOS technology; Dynamic voltage scaling; Energy consumption; Energy dissipation; Isolation technology; MOS devices; MOSFET circuits; Silicon on insulator technology; Threshold voltage; DTPMOS; Dynamic Threshold; Subthreshold;
Conference_Titel :
Circuits and Systems, 2003 IEEE 46th Midwest Symposium on
Print_ISBN :
0-7803-8294-3
DOI :
10.1109/MWSCAS.2003.1562554
