Title :
Application of high power terahertz sources to nonlinear spectroscopy of direct bandgap semiconductors
Author :
Morandotti, R. ; Razzari, L. ; Blanchard, F. ; Su, F.H. ; Sharma, G. ; Ayesheshim, A. ; Cocker, T.L. ; Titov, L.V. ; Bandulet, H-C ; Kieffer, J-C ; Ozaki, T. ; Reid, M. ; Hegmann, F.A.
Author_Institution :
INRS-EMT, Univ. du Quebec, Varennes, QC, Canada
Abstract :
Nonlinear dynamics of free-carriers in direct bandgap semiconductors at terahertz (THz) frequencies is studied using high power, few-cycle pulses. Techniques as Z-scan and THz-pump/THz-probe are employed to explore nonlinear interactions in both n-doped and photoexcited systems. The physical mechanism that gives rise to such interactions will be discussed in details.
Keywords :
photoexcitation; semiconductors; terahertz wave spectra; Z-scan technique; direct bandgap semiconductors; free-carriers; high power few-cycle pulses; high power terahertz sources; n-doped system; nonlinear dynamics; nonlinear interactions; nonlinear spectroscopy; photoexcited system; physical mechanism; terahertz frequencies; terahertz-pump terahertz-probe technique; Crystals; Effective mass; Electric fields; Laser beams; Laser excitation; Probes; Substrates;
Conference_Titel :
Thz Radiation (TERA), 2010 2nd IEEE International Workshop
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-8296-2
DOI :
10.1109/TERA.2010.5619929
