Title :
Using terahertz cascade lasers for determination of optical losses in active medium of silicon intracenter lasers
Author :
Pavlov, S.G. ; Eichholz, R. ; Abrosimov, N.V. ; Riemann, H. ; Wienold, M. ; Schrottke, L. ; Giehler, M. ; Hey, R. ; Grahn, H.T. ; Tredicucci, A. ; Beere, H.E. ; Ritchie, D.A. ; Hübers, H.W.
Author_Institution :
German Aerosp. Center (DLR), Inst. of Planetary Res., Berlin, Germany
Abstract :
Terahertz-range intracenter silicon lasers have demonstrated significant progress over past decade in expanding the frequency operation range, in manipulation of a silicon matrix as well as in lowering of optical pump threshold. While terahertz gain realized in silicon lasers has been already defined, optical losses in the active media have not been yet measured experimentally. We applied continuous wave terahertz quantum cascade lasers, operating at 2.5 THz and 3.1 THz for direct measurements of the light losses at conditions of optical pumping with pump intensities exceeding laser thresholds for corresponding media. These measurements allow estimates of THz losses as well as determination of physical mechanisms mainly contributing for total THz absorption in optically excited silicon. It was found that absorption by so called D--centers, dynamically induced in optically excited silicon, cause major loss of THz emission. These losses, however, can be significantly reduced by a proper procedure of crystal growth and doping.
Keywords :
bismuth; colour centre lasers; elemental semiconductors; light absorption; microwave photonics; optical losses; optical pumping; quantum cascade lasers; silicon; terahertz wave devices; Si:Bi; THz losses; continuous wave terahertz quantum cascade lasers; crystal doping; crystal growth; frequency 2.5 THz; frequency 3.1 THz; optical losses; optical pumping; terahertz gain; terahertz-range intracenter silicon lasers; total THz absorption; Absorption; Optical losses; Optical pumping; Pump lasers; Quantum cascade lasers; Silicon;
Conference_Titel :
Thz Radiation (TERA), 2010 2nd IEEE International Workshop
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4244-8296-2
DOI :
10.1109/TERA.2010.5619931