DocumentCode :
2825254
Title :
Properties of II-VI Semiconductor Thin Films Prepared by Vacuum Evaporation for Photovoltaic Application
Author :
Mohamed, Rania M. ; AbdelRassoul, Roshdy A. ; Rassoul, ElSayed M A
Author_Institution :
Mansoura Univ., Mansoura
fYear :
2007
fDate :
13-15 March 2007
Firstpage :
1
Lastpage :
8
Abstract :
Vacuum evaporation was used to deposit amorphous thin films of ll-VI Semiconductors. The material deposited included CdTe, Zither and ZnSe. Different deposition conditions were used. The deposited films were evaluated. Electrical and optical characterization of the films was performed, Measurements of the transmittance spectra of the deposited films were used to determine the electronic band gap energy, the refractive index, the dielectric constant, and the film thickness.
Keywords :
III-V semiconductors; energy gap; permittivity; refractive index; semiconductor thin films; solar control films; solar power; vacuum deposited coatings; CdTe - Binary; ZnSe - Binary; ZnTe - Binary; amorphous thin films; dielectric constant; electrical optical characterization; electronic band gap energy; ll-VI semiconductor thin films; photovoltaic application; refractive index; transmittance spectra; vacuum evaporation; Amorphous materials; Dielectric materials; II-VI semiconductor materials; Optical films; Optical materials; Photovoltaic systems; Semiconductor films; Semiconductor thin films; Solar power generation; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radio Science Conference, 2007. NRSC 2007. National
Conference_Location :
Cairo
Print_ISBN :
977-5031-86-9
Type :
conf
DOI :
10.1109/NRSC.2007.371408
Filename :
4234155
Link To Document :
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